Question 3 (40 points) Consider an n-type silicon wafer with…
Question 3 (40 points) Consider an n-type silicon wafer with a donor concentration of Nd = 2×1014 atoms/cm3. (a) Determine the temperature at which the intrinsic carrier concentrations is equal to the extrinsic electron concentration. To simplify your calculation, please assume complete ionization of the donors, and also NC, NV, and Eg are all temperature independent. Their values are given below. (12 points) (b) Determine the Fermi energy EF in EC – EF at 300 K for the n-type silicon assuming complete ionization of the donors. (10 points) (c) Calculate the electron and hole concentrations at 300 K and at 650 K. You need the result from part (a) to determine which equations to use for each temperature. (18 points) Take the bandgap of silicon as 1.12 eV, NC = 2.80×1019 cm–3, NV = 1.04×1019 cm–3, Boltzmann constant 1.38×10–23 J/K, and 1 eV = 1.60×10–19 J.
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