Consider a Silicon semiconductor doped with NA=[aman]*10^[aexp] cm^-3 and ND=[dman]*10^[dexp] cm^-3. Calculate the value of the conductivity given a hole mobility of [hmob] cm^2/Vs and an electron mobility of [emob] cm^2/Vs. Confirm using unit analysis that the resulting units are 1/ohm-cm.

Given that a positive potential is applied to the n-type side of a pn-junction relative to the p-side, and that potential results in a negative VA across the junction, describe what happens to the depletion width. Use the relevant equations or attention to current carriers to justify your answer.

Consider a Silicon block with a gap energy of Egap=3eV and a Ef-Ev=2.3eV. A) Determine the value of Efi, the intrinsic fermi level, with respect to Ev. B) What is the type of the silicon material? HINT: Draw a band diagram with values labeled.

What is the maximum wavelength in nanometers that would allow an electron to transition from Ev to Ec in a semiconductor with a gap of [gap] eV. Give your answer in nm.

Consider the vacuum tube below with a positive voltage on the right hand plate, and the left plate exposed to light. The work function of the plates is 3 eV. You may assume h=4×10^-15 eV s and c=3×10^8 m/s. a) If a photon of 350 nm wavelength interacts with the plate, an electron will be released T/F? Justify your ans on your show your work sheet?    

Slowly show your “show your work” pages to the camera. 

Construct a minimum spanning tree for the graph below using any method discussed in class.  

Give the adjacency matrix for the graph below.

 The Keeling Curve, measured at the Mauna Loa Observatory, tracks which of the following?

Which planetary boundary focuses on protecting Earth from harmful ultraviolet (UV) radiation from the sun?