Problem II (30 points+ 6 bonus points): Consider a doped p-t…
Problem II (30 points+ 6 bonus points): Consider a doped p-type semiconductor at a temperature T, which is close to room temperature (300 K). Its bandgap Eg is 60kBT. The ratio of the acceptor concentration (NA) and the intrinsic carrier concentration (ni) NA/ni is e25. We assume i) all the acceptors are ionized; ii) the effective masses for electrons and holes are the same and Nc is known; and iii) the energy at the top of the valence band is set as zero. calculate Ei calculate EF find ni in terms of Nc (optional, 6 bonus points) find the electron and hole concentration in terms of Nc. Note: Here kBT as used as the energy unit. Therefore, you do not need to calculate any actual values for Nc, kBT, etc.
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