Question 2: (25 points) The total current through a semiconductor consists of drift currents and diffusion currents of majority carriers and minority carriers. You are given a gallium arsenide sample with a length of 1 cm. The doping concentrations in the sample are Nd = 0 and Na = 5×1015 cm–3. Assume complete ionization, mn = 8,500 cm2/V-s, mp = 400 cm2/V-s, and ni = 1.8×106 cm–3. If you apply a voltage of 1 V across the sample, what is the drift current density? e = 1.60×10–19 C (7 points) Now you create a constant excess electron concentration of 2×1015 cm–3 at the surface (x = 0) of the sample by shooting an electron beam at the surface (see the figure below): What is the spatial distribution of the excess electron concentration? Assume tn0 = 1×10–6 s (6 points) What is the electron diffusion current density for 0 < x < 1 cm? (6 points) What is the total current in the gallium arsenide sample? (6 points)

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